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DMT10H025SSS - 100V N-Channel MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

High Frequency Switching Synchronous Rectification DC-DC Converters

Features

  • 100% Unclamped Inductive Switching.
  • Ensures More Reliable and Robust End.

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Datasheet Details

Part number DMT10H025SSS
Manufacturer DIODES
File Size 471.07 KB
Description 100V N-Channel MOSFET
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Full PDF Text Transcription

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DMT10H025SSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 23mΩ @ VGS = 10V 30mΩ @ VGS = 6V ID Max TA = +25°C 7.4A 6.5A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.  High Frequency Switching  Synchronous Rectification  DC-DC Converters Features and Benefits  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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