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DMT10H025SSS
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max
23mΩ @ VGS = 10V 30mΩ @ VGS = 6V
ID Max TA = +25°C
7.4A 6.5A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
High Frequency Switching Synchronous Rectification DC-DC Converters
Features and Benefits
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.