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DMT6013LSS - 60V N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications.

High Frequency Switching Synchronous Rectification DC-DC Converters SO-8 Pin 1 S

Key Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription for DMT6013LSS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMT6013LSS. For precise diagrams, and layout, please refer to the original PDF.

A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT6013LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 14.3mΩ @ VGS = 10V 21mΩ @ VGS = ...

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Product Summary BVDSS 60V RDS(ON) Max 14.3mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V ID Max TA = +25°C 10A 8.1A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications.

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