FCX458Q Datasheet 400v NPN High Voltage Transistor

Manufacturer: Diodes Incorporated

Overview: Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Datasheet Details

Part number	FCX458Q
Manufacturer	Diodes Incorporated
File Size	543.87 KB
Description	400V NPN HIGH VOLTAGE TRANSISTOR
Datasheet	FCX458Q-DIODES.pdf

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Key Features

BVCEO > 400V.
IC = 225mA Continuous Collector Current.
ICM = 500mA Peak Pulse Current.
Excellent hFE Characteristics up to 100mA.
Low saturation voltage VCE(sat) < 200mV @ 20mA.
Complementary PNP Type: FCX558Q.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen- and Antimony-Free. “Green” Device (Note 3).
The FCX458Q is suitable for automotive.

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