FCX458Q Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.
FCX458Q Key Features
- BVCEO > 400V
- IC = 225mA Continuous Collector Current
- ICM = 500mA Peak Pulse Current
- Excellent hFE Characteristics up to 100mA
- Low saturation voltage VCE(sat) < 200mV @ 20mA
- plementary PNP Type: FCX558Q
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen- and Antimony-Free. “Green” Device (Note 3)
- The FCX458Q is suitable for automotive