Kexin Electronics FCX458
NPN Silicon Planar High Voltage Transistor
FEATURES
400 Volt VCEO Ptot= 1 WattABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg Rating 400 400 5 300 1 200 2 -55 to +150 Unit V V V mA A mA W 1 SMD Type FCX458ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Currents Collector Cut-Off Currents Emitter Cut-Off Current Emitter Saturation Voltages Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage Switching times Symbol V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff Testconditons IC=100ìA IC=10mA* IE=100ìA VCB=320V