Galaxy Century Microelectronics FCX458
NPN Silicon Planar High Voltage Transistor
| Part No. | FCX458 |
|---|---|
| Datasheet | FCX458 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Silicon Planar High Voltage Transistor |
| Buy | Stock & Price |
FEATURES
● Complementary type: FCX558● 400Volt VCEO Product Specification FCX458 ORDERING INFORMATION Type No. FCX458 Marking N58 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 400 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 5 ICM Peak Pulse Current 500 IC Collector Current -Continuous 225 PD Power Dissipation 1 TJ, TSTG Junction and Storage Temperature -65 to +150 Units V V V mA mA W ℃ STM0172A 1 Product Specification NPN Silicon Planar High Voltage Transistor FCX458
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=320V 100 nA Collector-Emitter Cut-Off Current ICES VCES=320V 100 nA Emitter cut-off current IEB...
