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FCX493Q - 100V NPN POWER TRANSISTOR

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Key Features

  • BVCEO > 100V.
  • IC = 1A high Continuous Current.
  • Low saturation voltage VCE(sat) < 300mV @ 250mA.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen- and Antimony-Free. “Green” Device (Note 3).
  • The FCX493Q is suitable for automotive.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCX493Q 100V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 1A high Continuous Current • Low saturation voltage VCE(sat) < 300mV @ 250mA • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3) • The FCX493Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.