DIM650H2HS17-PA500 - Half Bridge IGBT

DYNEX

Key Features

Trench Gate IGBT.
Cu Base with Al2O3 Substrates.
High Thermal Cycling Capability.
10µs Short Circuit Withstand.
High Current Density.

DIM650H2HS17-PA500 half bridge igbt by DYNEX - Datasheet Preview

Datasheet Details

Part number	DIM650H2HS17-PA500
Manufacturer	DYNEX
File Size	487.58 KB
Description	Half Bridge IGBT
Datasheet	DIM650H2HS17-PA500 Datasheet

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Full PDF Text Transcription (Reference)

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Replaces DS6303-1 TRENCH Gen5 TMOS DIM650H2HS17-PA500 Half Bridge IGBT Module DS6303-2 February 2020 (LN39622) FEATURES  Trench Gate IGBT  Cu Base with Al2O3 Substrates  High Thermal Cycling Capability  10µs Short Circuit Withstand  High Current Density APPLICATIONS  Motor Drives  High Power Converters  Renewable Energy Power Conversion  High Reliability Inverters The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM650H2HS17-PA500 is a half bridge 1700V, trench gate, insulated gate bipolar transistor (IGBT) module with enhanced field stop and implantation technology.