Datasheet Details
| Part number | DS1345W |
|---|---|
| Manufacturer | Dallas Semiconducotr |
| File Size | 211.32 KB |
| Description | 1024k Nonvolatile SRAM |
| Datasheet |
 DS1345W Datasheet
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General Description
A0-A16
- Address Inputs
DQ0-DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
RST
- Reset Output
BW
- Battery Warning Output
VCC GND
- Power (+3.3 Volts) - Ground
NC
- No Connect
DESCRIPTION
The DS1345W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, ful
Key Features
- 10 years minimum data retention in the absence of external power.
- Data is automatically protected during power loss.
- Power supply monitor resets processor when VCC power loss occurs and holds processor in reset during VCC ramp-up.
- Battery monitor checks remaining capacity daily.
- Read and write access times of 100 ns.
- Unlimited write cycle endurance.
- Typical standby current 50 µA.
- Upgrade for 128k x 8 SRAM, EEPROM or Flash.
- Lithium battery is electric.