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DS1345AB - 1024k Nonvolatile SRAM

General Description

A0 A16 - Address Inputs DQ0 DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable RST - Reset Output BW - Battery Warning Output VCC GND - Power (+5V) - Ground NC - No Connect DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully stati

Key Features

  • 10 years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Power supply monitor resets processor when VCC power loss occurs and holds processor in reset during VCC ramp-up.
  • Battery monitor checks remaining capacity daily.
  • Read and write access times of 70ns.
  • Unlimited write cycle endurance.
  • Typical standby current 50µA.
  • Upgrade for 128k x 8 SRAM, EEPROM or Flash.
  • Lithium battery is electricall.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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19-5589; Rev 10/10 www.maxim-ic.