Datasheet Details
| Part number | DS1345Y |
|---|---|
| Manufacturer | Maxim Integrated (now Analog Devices) |
| File Size | 202.13 KB |
| Description | 1024k Nonvolatile SRAM |
| Datasheet |
 DS1345Y Datasheet
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General Description
A0
A16
- Address Inputs
DQ0
DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
RST - Reset Output
BW - Battery Warning Output
VCC GND
- Power (+5V) - Ground
NC - No Connect
DESCRIPTION
The DS1345 1024k NV SRAMs are 1,048,576-bit, fully stati
Key Features
- 10 years minimum data retention in the absence of external power.
- Data is automatically protected during power loss.
- Power supply monitor resets processor when VCC power loss occurs and holds processor in reset during VCC ramp-up.
- Battery monitor checks remaining capacity daily.
- Read and write access times of 70ns.
- Unlimited write cycle endurance.
- Typical standby current 50µA.
- Upgrade for 128k x 8 SRAM, EEPROM or Flash.
- Lithium battery is electricall.