DC8050
DC8050 is TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR manufactured by Dc Components.
Description
Designed for use in 2W output amplifier of portable radios in class B push-pull operation.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o
Pinning
1 = Emitter 2 = Base 3 = Collector
Absolute Maximum Ratings(TA=25o C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o
Symbol VCBO VCEO VEBO IC IB PD PD TJ TSTG
Rating 40 25 6 1.5 500 1 2 +150 -55 to +150
Unit V V V A m A W W o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
3 2 1
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min 40 25 6 45 85 40 100 2%
Typ
- Max 0.1 0.1 0.5 1.2 1 500
- Unit V V V µA µA V V V MHz
Test Conditions IC=100µA IC=2m A IE=100µA VCB=35V VEB=6V IC=0.8A, IB=80m A IC=0.8A, IB=80m A IC=10m A, VCE=1V IC=5m A, VCE=1V IC=100m A, VCE=1V IC=800m A, VCE=1V IC=50m A, VCE=10V
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width
(1) (1)
VCE(sat) VBE(sat) VBE(on) h FE1 h FE2 h FE3 f T 380µs, Duty Cycle
Classification of h FE2
Rank Range
85~160
120~200
160~300
250~500...