• Part: DC8050
  • Description: TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Dc Components
  • Size: 237.14 KB
Download DC8050 Datasheet PDF
Dc Components
DC8050
DC8050 is TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR manufactured by Dc Components.
Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25o C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IB PD PD TJ TSTG Rating 40 25 6 1.5 500 1 2 +150 -55 to +150 Unit V V V A m A W W o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min 40 25 6 45 85 40 100 2% Typ - Max 0.1 0.1 0.5 1.2 1 500 - Unit V V V µA µA V V V MHz Test Conditions IC=100µA IC=2m A IE=100µA VCB=35V VEB=6V IC=0.8A, IB=80m A IC=0.8A, IB=80m A IC=10m A, VCE=1V IC=5m A, VCE=1V IC=100m A, VCE=1V IC=800m A, VCE=1V IC=50m A, VCE=10V Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width (1) (1) VCE(sat) VBE(sat) VBE(on) h FE1 h FE2 h FE3 f T 380µs, Duty Cycle Classification of h FE2 Rank Range 85~160 120~200 160~300 250~500...