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DC8050 - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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Designed for use in 2W output amplifier of portable radios in class B push-pull operation.

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Part number DC8050
Manufacturer Dc Components
File Size 237.14 KB
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
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www.DataSheet4U.com DC COMPONENTS CO., LTD. R DC8050 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IB PD PD TJ TSTG Rating 40 25 6 1.5 500 1 2 +150 -55 to +150 Unit V V V A mA W W o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .
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