DC8550S
DC8550S is PNP Transistor manufactured by Dc Components.
Description
Designed for general purpose amplifier applications.
TO-92
Pinning
1 = Emitter 2 = Base 3 = Collector
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) o o
Absolute Maximum Ratings(TA=25o C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -25 -20 -5 -700 625 +150 -55 to +150 Unit V V V m A m W o o
.050 Typ (1.27)
.022(0.56) .014(0.36) .100 Typ (2.54)
.022(0.56) .014(0.36)
3 2 1
.148(3.76) .132(3.36)
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO
(1)
Min -25 -20 -5 85 150 2%
Typ 170
- Max -1 -0.6 -1 500 10
Unit V V V µA V V MHz p F
Test Conditions IC=-10µA IC=-1m A IE=-10µA VCB=-20V IC=-0.5A, IB=-50m A IC=-150m A, VCE=-1V IC=-150m A, VCE=-1V IC=-500m A, VCE=-1V IC=-20m A, VCE=-10V, f=100MHz VCB=-10V, f=1MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain
(1) (1)
VCE(sat) VBE(on) h FE1 h FE2 f T
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
Cob 380µs, Duty Cycle
Classification of h FE1
Rank Range
85~160
100~200
150~300...