• Part: DC8550S
  • Description: PNP Transistor
  • Category: Transistor
  • Manufacturer: Dc Components
  • Size: 263.58 KB
Download DC8550S Datasheet PDF
Dc Components
DC8550S
DC8550S is PNP Transistor manufactured by Dc Components.
Description Designed for general purpose amplifier applications. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) o o Absolute Maximum Ratings(TA=25o C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -25 -20 -5 -700 625 +150 -55 to +150 Unit V V V m A m W o o .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO (1) Min -25 -20 -5 85 150 2% Typ 170 - Max -1 -0.6 -1 500 10 Unit V V V µA V V MHz p F Test Conditions IC=-10µA IC=-1m A IE=-10µA VCB=-20V IC=-0.5A, IB=-50m A IC=-150m A, VCE=-1V IC=-150m A, VCE=-1V IC=-500m A, VCE=-1V IC=-20m A, VCE=-10V, f=100MHz VCB=-10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain (1) (1) VCE(sat) VBE(on) h FE1 h FE2 f T Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Cob 380µs, Duty Cycle Classification of h FE1 Rank Range 85~160 100~200 150~300...