• Part: DC8550
  • Description: PNP Transistor
  • Category: Transistor
  • Manufacturer: Dc Components
  • Size: 237.27 KB
Download DC8550 Datasheet PDF
Dc Components
DC8550
DC8550 is PNP Transistor manufactured by Dc Components.
Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25o C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IB PD PD TJ TSTG Rating -40 -25 -6 -1.5 -500 1 2 +150 -55 to +150 Unit V V V A m A W W o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min -40 -25 -6 45 85 40 100 2% Typ - Max -0.1 -0.1 -0.5 -1.2 -1 500 - Unit V V V µA µA V V V MHz Test Conditions IC=-100µA IC=-2m A IE=-100µA VCB=-35V VEB=-6V IC=-0.8A, IB=-80m A IC=-0.8A, IB=-80m A IC=-10m A, VCE=-1V IC=-5m A, VCE=-1V IC=-100m A, VCE=-1V IC=-800m A, VCE=-1V IC=-50m A, VCE=-10V, f=100MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width (1) (1) VCE(sat) VBE(sat) VBE(on) h FE1 h FE2 h FE3 f T 380µs, Duty Cycle Classification of h FE2 Rank Range 85~160 120~200 160~300 250~500...