Datasheet Details
| Part number | DXTD882 |
|---|---|
| Manufacturer | Dc Components |
| File Size | 262.13 KB |
| Description | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
| Download | DXTD882 Download (PDF) |
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| Part number | DXTD882 |
|---|---|
| Manufacturer | Dc Components |
| File Size | 262.13 KB |
| Description | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
| Download | DXTD882 Download (PDF) |
|
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Designed for the output stage of 0.75W audio, voltage regulator, and relay driver.
SOT-89 .066(1.70) .059(1.50) .063(1.60) .055(1.40) Pinning 1 = Base 2 = Collector 3 = Emitter .167(4.25) .159(4.05) .102(2.60) .095(2.40) 1 2 3 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 40 30 5 3 1.5 +150 -55 to +150 Unit V V V A W o C o C .020(0.51) .014(0.36) .060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40) .016(0.41) .014(0.35) Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob 380µs, Duty Cycle 2% (1) Min 40 30 5 30 100 - Typ 90 45 Max 1 1 0.5 2 500 - Unit V V V µA µA V V MHz pF Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=3V, IB=0 IC=2A, IB=0.2A IC=2A, IB=0.2A IC=20mA, VCE=2V IC=1A, VCE=2V IC=0.1A, VCE=5V, f=100MHz VCB=10V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Classification of hFE2 Rank Range Q 100~200 P 160~320 E 250~500
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R DXTD882 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR.
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