Datasheet Details
| Part number | DXTD965 |
|---|---|
| Manufacturer | Dc Components |
| File Size | 261.96 KB |
| Description | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
| Download | DXTD965 Download (PDF) |
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| Part number | DXTD965 |
|---|---|
| Manufacturer | Dc Components |
| File Size | 261.96 KB |
| Description | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
| Download | DXTD965 Download (PDF) |
|
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Designed for use in AF output amplifier and flash unit.
SOT-89 Pinning 1 = Base 2 = Collector 3 = Emitter .066(1.70) .059(1.50) .063(1.60) .055(1.40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (continuous) Collector Current (peak PT=10mS) Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD TJ TSTG Rating 40 20 7 5 8 1.2 +150 -55 to +150 Unit V V V A A W o o .167(4.25) .159(4.05) 1 2 3 .102(2.60) .095(2.40) .020(0.51) .014(0.36) .060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40) .016(0.41) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE1 hFE2 fT Cob 380µs, Duty Cycle 2% Min 40 20 7 340 150 - Typ 0.35 150 - Max 0.1 0.1 1 800 50 Unit V V V µA µA V MHz pF IC=1mA Test Conditions IC=100µA IE=10µA VCB=10V VEB=7V IC=3A, IB=0.1A IC=0.5A, VCE=2V IC=2A, VCE=2V IE=50mA, VCE=6V VCB=20V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Classification of hFE1 Rank Range R 340~600 S 560~800
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R DXTD965 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR.
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