DTL2N60SJ Overview
DTP2N60SJ/DTP2N60FSJ/DTU2N60SJ/DTL2N60SJ ZZZGLQWHNMS /$IBOOFM607 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 600 VGS = 10 V Qg (Max.) (nC) Qgs (nC) Qgd (nC) 31 4.6 17 Configuration Single.
DTL2N60SJ Key Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s
- Sink to Lead Creepage Distance = 4.8 mm
- Dynamic dV/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available