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DTL2N65SJ - N-Channel Super Junction Power MOSFET

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • Dynamic dV/dt Rating.
  • Low Thermal Resistance.
  • Lead (Pb)-free Available Available RoHS.

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Datasheet Details

Part number DTL2N65SJ
Manufacturer Din-Tek
File Size 926.16 KB
Description N-Channel Super Junction Power MOSFET
Datasheet download datasheet DTL2N65SJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DTP2N65SJ/DTP2N65FSJ/DTU2N65SJ/DTL2N65SJ ZZZGLQWHNMS /$IBOOFM657 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) 650 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single 2.3 FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.