DTL2N65SJ - N-Channel 650V Power MOSFET

VBsemi

Key Features

Isolated Package.
High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
Sink to Lead Creepage Distance = 4.8 mm.
Dynamic dV/dt Rating.
Low Thermal Resistance.
Lead (Pb)-free Available Available RoHS.

DTL2N65SJ n-channel 650v power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	DTL2N65SJ
Manufacturer	VBsemi
File Size	441.84 KB
Description	N-Channel 650V Power MOSFET
Datasheet	DTL2N65SJ Datasheet

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DTL2N65SJ-VB DTL2N65SJ-VB Datasheet www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 2.3 31 4.6 17 Single FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.