DTL2N65SJ Datasheet | VBsemi

FEATURES - Isolated Package - High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz) - Sink to Lead Creepage Distance = 4.8 mm - Dynamic d V/dt Rating - Low Thermal Resistance - Lead (Pb)-free Available Available Ro HS- PLIANT TO-251 D GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C PD d V/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Remendations (Peak Temperature) for 10 s Mounting...