The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P-Channel 20 V (D-S) MOSFET
DTQ1203
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) - 20
RDS(on) () 0.66 at VGS = - 4.5 V 1.60 at VGS = - 2.5 V
ID (A)c - 0.8 - 0.55
Qg (Typ.) 0.75 nC
DFN 1006
Top View
Bottom View
G S
D
G
FEATURES • DT-Trench Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC • Gate-Source ESD Protected APPLICATIONS • Load Switch
'
* 6
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 20
V
VGS
± 12
TC = 25 °C
- 0.8
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
IDM
- 0.5
- 0.3a, b
- 0.
DTQ1203 Datasheet
