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N-Channel 20 V (D-S) MOSFET
DTQ1204
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) 20
RDS(on) () 0.7at VGS = 4.5 V 0.85at VGS = 2.5 V
ID (A)c 0.6 0.56
Qg (Typ.) 0.79 nC
DFN 1006
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G S
D
G
FEATURES • DT-Trench Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC • Gate-Source ESD Protected APPLICATIONS • Load Switch
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
20
V
VGS
± 12
TC = 25 °C
0.6
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
0.45 0.28a, b
Pulsed Drain Current
TA = 70 °C IDM
0.12a, b
A
2.2
Continuous Source-Drain Diode Current
TC = 25 °C
IS
TA = 25 °C
0.6 0.29
TC = 25 °C
0.
DTQ1204 Datasheet
