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N-Channel 30 V (D-S) MOSFET
DTQ6300
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (mΩ )(Typ.)
30
1.7 at VGS = 10 V
2.4 at VGS = 4.5 V
ID (A)a, e 130 100
Qg (Typ.) 148 nC
FEATURES • DT-Trench Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS
• DC/DC Converter • Synchronous Rectification
DFN5X6
D
Top View
Bottom View
Top View
PIN1
1
8
2
7
3
6
4
5
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
ID
TA = 25 °C
Pulsed Drain Current
TA = 70 °C IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS L = 0.
DTQ6300 Datasheet
