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N-Channel 30 V (D-S) MOSFET
DTQ6302E
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30
0.002 at VGS = 10 V 0.0025 at VGS = 4.5 V
ID (A)a, e 100 90
Qg (Typ.) 82 nC
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS
• OR-ing • Server
Top View
DFN5X6 Bottom View
Top View
18 27 36 45
D G
PIN1
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.
DTQ6302E Datasheet
