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P-Channel 30-V (D-S) MOSFET
DTQ630
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) - 30
RDS(on) (Ω) 0.0089 at VGS = - 10 V 0.0125 at VGS = - 4.5 V
ID (A)a - 100 - 90
Top View
DFN5X6 Bottom View
Qg (Typ.) 78 nC
FEATURES
• Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested
APPLICATIONS • Notebook
- Load Switch
Top View
S
18 27 36 45
G
RoHS
COMPLIANT
PIN1
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IDM IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.
DTQ6301 Datasheet
