The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (mΩ )(Typ.)
30
0.55 at VGS = 10 V
0.82at VGS = 4.5 V
ID (A)a, e 330 200
Qg (Typ.) 118 nC
FEATURES • DT-Trench Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS
• DC/DC Converter • Synchronous Rectification
DTQ6310
www.din-tek.jp
DFN5X6
D
Top View
Bottom View
Top View
PIN1
1
8
2
7
3
6
4
5
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
ID
TA = 25 °C
Pulsed Drain Current
Avalanche Current Pulse Single Pulse Avalanche Energy
TA = 70 °C
IDM
IAS
L = 0.
DTQ6310 Datasheet
