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P-Channel 30-V (D-S) MOSFET
DTQ633
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (mΩ)
- 30
4.6 at VGS = - 10 V
7 at VGS = - 4.5 V
ID (A)a - 110 - 90
Qg (Typ.) 79 nC
FEATURES • DT-Trench Power MOSFET • 100 % Rg and UIS tested
APPLICATIONS • Notebook
- Load Switch
RoHS
COMPLIANT
Top View
DFN5X6 Bottom View
Top View
1
8
2
7
3
6
4
5
S G
PIN1
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
TC = 25 °C
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
IDM
TC = 25 °C TA = 25 °C
IS
L = 0.
DTQ633 Datasheet
