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P-Channel 100-V (D-S) MOSFET
DTS1003
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) - 100
RDS(on) (Ω) 0.18 at VGS = - 10 V 0.2 at VGS = - 4.5 V
ID (A) -3 -2.8
Qg (Typ.) 7.9
TO-236 (SOT-23)
G1 S2
3D
Top View DTS1003
FEATURES • Halogen-free According to IEC 61249-2-21
Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size
APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS - 100
Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current
TA = 25 °C TA = 70 °C
VGS ID IDM
- 3.8 - 2.5
± 20 - 10.6
-3 - 2.8
Continuous Source Current (Diode Conduction)a, b
IS - 5
- 6.
DTS1003 Datasheet
