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N-Channel 100 V (D-S) MOSFET
DTS1006
www.din-tek.jp
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)a
0.130 at VGS = 10 V
1.8
100
0.132 at VGS = 6 V
1.6
0.135 at VGS = 4.5 V
1.5
Qg (Typ.) 2.1 nC
G1 S2
3D
FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Material categorization:
APPLICATIONS • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
VDS VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IDM IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.
DTS1006 Datasheet
