DTSP1204 Datasheet | Din-Tek Semiconductor

FEATURES - DT-Trench Power MOSFET - 100 % Rg and UIS tested - ESD Protection Diode Embedded APPLICATIONS - Battery Management - POL Applications - Battery Protection Applications S1 S2 Pin 1 S2 G2 S2 S1 G1 S1 Pin 1 G1 N-Channel MOSFET G2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS IDM IS IAS EAS TJ, Tstg LIMIT 12 ±8 26 19 9.0 b, c 5.4 b, c 105 26 5.2 b, c 25 8.9 16 10.2 2.1 b, c 1.3 b, c -55 to 150 260 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain) t  10 s Steady State SYMBOL Rth JA Rth...