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DTU1N10
N-Channel 100 V (D-S) MOSFET
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () 0. at VGS = 10 V 0.1 at VGS = V
ID (A) 1 1
TO-252
FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • 100 % Rg Tested
APPLICATIONS • Primary Side Switch
D
GDS Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAR
Repetitive Avalanche Energy (Duty Cycle 1 %)
L = 0.
DTU12N10 Datasheet
