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D56/
www.daysemi.jp
N-Channel 100 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) 100 RDS(on) () 0.095 at VGS = 10 V 0.100 at VGS = 6 V ID (A) 15 15
• TrenchFET® Power MOSFETS • 175 °C Junction Temperature • 100 % Rg Tested
APPLICATIONS
D
• Primary Side Switch
TO-252
G
G
D
S
S N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle 1 %) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.