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D561
www.daysemi.jp
P-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) - 30 RDS(on) (Ω) 0.0125 at VGS = - 10 V 0.0205 at VGS = - 4.5 V ID (A)d - 14.9 - 11.6 Qg (Typ.) 29.5 nC
• • • •
Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• Load Switch • Notebook Adaptor Switch
TO-252
S
G
G
D
S
D P-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 30 ± 25 - 14.9 - 11.9 - 10.9a, b - 8.6a, b - 60 - 4.1 - 2.2a, b - 20 20 5.0 3.2 2.7a, b 1.