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D561
www.daysemi.jp
P-Channel 100 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) - 100 RDS(on) () 0.295 at VGS = - 10 V 0.315 at VGS = - 6 V ID (A) - 15 - 15 Qg (Typ.) 23.2 nC
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Active Clamp in Intermediate DC/DC Power Supplies • H-Bridge High Side Switch for Lighting Application
TO-252
S
G
G
D
S
D P-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 100 ± 20 - 15 - 9.1 - 2.3a, b - 1.
DTU15P10 Datasheet
