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P-Channel 100 V (D-S) MOSFET
www.din-tek.jp
DTU19P10
PRODUCT SUMMARY
VDS (V) - 100 RDS(on) (Ω) 0.195 at VGS = - 10 V 0.210 at VGS = - 4.5 V ID (A) - 19 - 17 Qg (Typ.) 11.7
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Switch • DC/DC Converters
TO-252
S
G
Drain Connected to Tab G D S D P-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.
DTU19P10 Datasheet
