DTU35N06 Datasheet | Din-Tek Semiconductor

FEATURES D Trench FETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 125_C L = 0.1 m H TC = 25_C TA = 25_C VDS VGS IDM IS IAR EAR TJ, Tstg "20 35 20 90 30 10 50 106b 2a - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. t v 10 sec Steady State Symbol Rth JA Rth JC Typical 15 40...