Datasheet Summary
N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features
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- High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly
SOT-23
A D TOP VIEW G E D G H K J L M S B C
Dim A B C D E G H J K L M
Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076
Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178
Mechanical Data
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- Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202 Method 208 Pin Connection: See Diagram Marking: S07 Weight: 0.008 grams (approx.)
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage Drain-Gate Voltage
@ TA = 25°C unless otherwise specified...