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BS807 - N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Key Features

  • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D TOP VIEW G E D G H K J L M S B C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data.
  • Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202 Method 208 Pin Connect.

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BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D TOP VIEW G E D G H K J L M S B C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data · · · · · Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202 Method 208 Pin Connection: See Diagram Marking: S07 Weight: 0.008 grams (approx.