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BS870 - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Motor Control Power Management Functions Backlighting Logic Level Gate D

Key Features

  • BVDSS RDS(ON) Max ID Max 60V 5Ω @ VGS = 10V 250mA.

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BS870 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS RDS(ON) Max ID Max 60V 5Ω @ VGS = 10V 250mA Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Power Management Functions  Backlighting  Logic Level Gate Drive Switching  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Notes 3)  For automotive applications requiring specific change control (i.e.