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BS870 - N-Channel Enhancement MOSFET

Features

  • Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected 2KV HBM Absolute Maximum Ratings Ta=25 Parameter Drain-Source Voltage Gate-Source Voltage -Continuous Drain Current -Continuous ( Note:1) -Pulsed Power Dissipation (Note 1) Thermal Resistance. Junction- to-Ambient Junction Temperature Junction and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB. Electrical Characteristics Ta = 25 Parame.

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SMD Type MOSFET N-Channel Enhancement MOSFET BS870 Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected 2KV HBM Absolute Maximum Ratings Ta=25 Parameter Drain-Source Voltage Gate-Source Voltage -Continuous Drain Current -Continuous ( Note:1) -Pulsed Power Dissipation (Note 1) Thermal Resistance.Junction- to-Ambient Junction Temperature Junction and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB. Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage (Note.2) Zero Gate Voltage Drain Current (Note.2) Gate-Body Leakage Current (Note.2) Gate Threshold Voltage (Note.2) Static Drain-Source On-Resistance (Note.
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