BS870 Datasheet

The BS870 is a DMOS Transistors.

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Part NumberBS870
ManufacturerGeneral Semiconductor
Overview BS870 DMOS Transistors (N-Channel) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switching No minority carrier storage time CMOS logic compatible inpu.
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* High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Top View .056 (1.43) .052 (1.33) 2 max. .004 (0.1) .007 (0.175) .005 (0.125) 1 .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) MECHANICAL DA.
Part NumberBS870
DescriptionN-Channel MOSFET
ManufacturerDiodes Incorporated
Overview and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management application. and Benefits BVDSS RDS(ON) Max ID Max 60V 5Ω @ VGS = 10V 250mA Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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Part NumberBS870
DescriptionN-Channel Enhancement MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type MOSFET N-Channel Enhancement MOSFET BS870 Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected 2K. Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected 2KV HBM Absolute Maximum Ratings Ta=25 Parameter Drain-Source Voltage Gate-Source Voltage -Continuous Drain Current -Continuous ( Note:1) -Pulsed Power Dissi.