This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Load Switch
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic,
Full PDF Text Transcription for DMN2300UFB (Reference)
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Product Summary BVDSS 20V RDS(ON) 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V ID Max TA = +25°C TA 1=.3+22A5°C 1.11A 0.91A DMN2300UFB 20V N-CHANNEL ENHANCEME...
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= +25°C TA 1=.3+22A5°C 1.11A 0.91A DMN2300UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Footprint of Just 0.6mm2 – Thirteen Times Smaller Than SOT23 0.5mm Profile – Ideal for Low Profile Applications On Resistance <200mΩ @ VGS = 4.5V Low Gate Threshold Voltage Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) ESD Protected Gate Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency powe
DMN2300UFB Datasheet
