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DMN2300UFB4 - 20V N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Load Switch Mechanical Data Case: X2-DFN1006-3 Case Material: Molded Plastic

Key Features

  • Footprint of Just 0.6mm2.
  • Thirteen Times Smaller Than SOT23.
  • 0.4mm Profile.
  • Ideal for Low Profile.

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Full PDF Text Transcription for DMN2300UFB4 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2300UFB4. For precise diagrams, and layout, please refer to the original PDF.

Product Summary BVDSS 20V RDS(ON) 175m @ VGS = 4.5V 240m @ VGS = 2.5V 360m @ VGS = 1.8V 500m @ VGS = 1.5V ID TA = +25°C (Note 5) 1.30A 1.11A 0.91A 0.82A DMN2300UFB4 2...

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GS = 1.5V ID TA = +25°C (Note 5) 1.30A 1.11A 0.91A 0.82A DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features  Footprint of Just 0.6mm2 – Thirteen Times Smaller Than SOT23  0.4mm Profile – Ideal for Low Profile Applications  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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