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A Product Line of Diodes Incorporated
DMN2300UFD
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) Max 200mΩ @ VGS = 4.5V 260mΩ @ VGS = 2.5V 400mΩ @ VGS = 1.8V 500mΩ @ VGS = 1.5V ID max TA = 25°C (Notes 4) 1.73A 1.50A 1.27A 1.15A
Features and Benefits
• • • • • • Low Gate Threshold Voltage Fast Switching Speed “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 2KV Qualified to AEC-Q101 Standards for High Reliability
20V
Mechanical Data Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.