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DMN2300UFD - 20V N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Load switch Case: X1-DFN1212-3

Key Features

  • Low Gate Threshold Voltage Fast Switching Speed “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 2KV Qualified to AEC-Q101 Standards for High Reliability 20V Mechanical Data.

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Full PDF Text Transcription for DMN2300UFD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2300UFD. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet.co.kr A Product Line of Diodes Incorporated DMN2300UFD 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) Max 200mΩ @ VGS = 4.5V 260mΩ @...

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MOSFET Product Summary V(BR)DSS RDS(on) Max 200mΩ @ VGS = 4.5V 260mΩ @ VGS = 2.5V 400mΩ @ VGS = 1.8V 500mΩ @ VGS = 1.5V ID max TA = 25°C (Notes 4) 1.73A 1.50A 1.27A 1.15A Features and Benefits • • • • • • Low Gate Threshold Voltage Fast Switching Speed “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 2KV Qualified to AEC-Q101 Standards for High Reliability 20V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency pow

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