DT410EL Description
DT410EL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR.
DT410EL Key Features
- High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Tr
- 10° 0.254 10°
- SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above
- 528 85 20 9.0 72 49 47 10 1.5 5.6
- 20 120 80 80 16
- 1.5 1.1 0.2 0.37
- 6.0 2.0 1.5 0.25 0.50
- V W A m VDS = VGS, ID = 250µA VGS = 5.0V, ID = 2.1A VGS = 5.0V, VDS = 5.0V VGS = 10V, ID = 2.1A BVDSS IDSS IGSSF IGSSR 1