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Diodes Incorporated
IMX8
IMX8 is DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR manufactured by Diodes Incorporated.
Features - Epitaxial Planar Die Construction - plementary PNP Type Available (IMT4) - Small Surface Mount Package - Lead Free/Ro HS pliant (Note 3) - "Green" Device, Note 4 and 5 Mechanical Data - Case: SOT-26 - Case Material: Molded Plastic, "Green" Molding pound, Note 5. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020C - Terminal Connections: See Diagram - Terminals: Solderable per MIL-STD-202, Method 208 - Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). - Marking Information: KX8, See Page 3 - Ordering & Date Code Information: See Page 3 - Weight: 0.016 grams (approximate) DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR B2 B1 E1 C2 E2 C1 J DF B2 B1 E1 C2 E2 C1 SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 F ⎯ ⎯ 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 α 0° 8° ⎯ All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG Value 120 120 5.0 50 300 417 -55 to +150 Unit V V V m A m W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS...