Diodes Incorporated BS208
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
| Part No. | BS208 |
|---|---|
| Datasheet | BS208 Download |
| Manufacturer |  Diodes Incorporated |
| Description | P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR |
| Buy | Stock & Price |
FEATURES
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● High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A B TO-92 Dim A B C Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40
MECHANICAL DATA
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● Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.18 grams (approx.) D BOTTOM VIEW C D E G H SG D All Dimensions in mm H G H
MAXIMUM RATINGS
Drain-Source-Voltage Drain-Gate-Voltage @ TA = 25°C unless otherwise specified Symbol -VDSS -VDGS VGS -ID Pd Tj, TSTG Value 240 200 ±20 200 830 –55 to +150 Unit V V V mA mW °C Characteristic Gate-Source-Voltage (pulsed) (Note 2) Drain-Current (continuous) Power Dissipation @TC = 25°C (Note 1) Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol IF VF Value 0.22 0.85 Unit A V Maximum Forward Current (continuous) Forward Voltage Drop (Typical) @ VGS = 0, IF = 0.75...