Datasheet4U Logo Datasheet4U.com

BS208 - DMOS Transistors (P-Channel)

Key Features

  • High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Specially suited for telephone subsets max. ∅ .022 (0.55) .098 (2.5) D G S.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BS208 P-channel enhancement mode vertical D-MOS transistor NXP
BS208 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Diodes Incorporated
BS200 Water Bath Instruction Manual Yamato
BS204 S-Band TR Tube EEV
BS2100F 600V High voltage High & Low-side / Gate Driver ROHM

Other Datasheets by General Semiconductor (now Vishay)

Part Number Description
BS209 DMOS Transistors (P-Channel)
BS223 DMOS Transistors (P-Channel)
BS250 DMOS Transistors (P-Channel)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BS208 DMOS Transistors (P-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Specially suited for telephone subsets max. ∅ .022 (0.55) .098 (2.5) D G S MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g On special request, this transistor is also manufactured in the pin configuration TO-18.