General Semiconductor BS208
DMOS Transistors (P-Channel)
| Part No. | BS208 |
|---|---|
| Datasheet | BS208 Download |
| Manufacturer |  General Semiconductor |
| Description | DMOS Transistors (P-Channel) |
| Buy | Stock & Price |
FEATURES
♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Specially suited for telephone subsets max. ∅ .022 (0.55) .098 (2.5) D G SMECHANICAL DATA
Case: TO-92 Plastic Package Weight: approx. 0.18 g On special request, this transistor is also manufactured in the pin configuration TO-18. Dimensions in inches and (millimeters)MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 240 240 ± 20 200 0.831) 150 –65 to +150 Unit V V V mA W °C °C –VDSS –VDGS VGS –ID Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
