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BS208 - P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Key Features

  • High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A B TO-92 Dim A B C Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70.
  • 0.63 3.68 2.67 1.40 Mechanical Data.
  • Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.18 grams (approx. ) D BOTTOM VIEW C D E G H SG D All Dimensions in mm H G H M.

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BS208 P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A B TO-92 Dim A B C Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Mechanical Data · · · · Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.18 grams (approx.