BS208 Datasheet and Specifications PDF

The BS208 is a P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR.

Key Specifications

Length141 mm
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Part NumberBS208 Datasheet
ManufacturerDiodes Incorporated
Overview BS208 P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subse.
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* High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A B TO-92 Dim A B C Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70
* 0.63 3.68 2.67 1.40 Mechanical Data
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* Case: TO-92, Plastic Leads: So.
Part NumberBS208 Datasheet
DescriptionP-channel enhancement mode vertical D-MOS transistor
ManufacturerNXP Semiconductors
Overview P-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope. Intended for use in relay, high-speed and line transformer drivers. PINNING - TO-92 PIN 1 2 3 DESCRIPTION source gate drain MA.
* Direct interface to C-MOS
* High-speed switching
* No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope. Intended for use in relay, high-speed and line transformer drivers. PINNING - TO-92 PIN 1 2 3 DESCRIPTION source gate drain MAM149 BS208.
Part NumberBS208 Datasheet
DescriptionDMOS Transistors (P-Channel)
ManufacturerGeneral Semiconductor
Overview BS208 DMOS Transistors (P-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High breakdown voltage High input impedance Low gate threshold voltage Low drai.
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* High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Specially suited for telephone subsets max. ∅ .022 (0.

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