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BS208 - P-channel enhancement mode vertical D-MOS transistor

General Description

P-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope.

Intended for use in relay, high-speed and line transformer drivers.

Fig.1 Simplified outline and symbol.

Key Features

  • Direct interface to C-MOS.
  • High-speed switching.
  • No secondary breakdown.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BS208 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope. Intended for use in relay, high-speed and line transformer drivers. PINNING - TO-92 PIN 1 2 3 DESCRIPTION source gate drain MAM149 BS208 handbook, halfpage 1 d 2 3 g s Fig.1 Simplified outline and symbol.