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BSN20 - N-Channel MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting DC-DC Converters Power Management Functions M

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEW PRODUCT YM BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary V(BR)DSS 50V RDS(ON) 1.8 @ VGS = 10V 2.0 @ VGS = 4.5V ID TA = +25°C 500mA 450mA Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.