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BSN20 - N-Channel 60V MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Low Threshold: 2 V (typ. ).
  • Low Input Capacitance: 25 pF.
  • Fast Switching Speed: 25 ns.
  • Low Input and Output Leakage.
  • TrenchFET® Power MOSFET.
  • 1200V ESD Protection.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number BSN20
Manufacturer VBsemi
File Size 303.16 KB
Description N-Channel 60V MOSFET
Datasheet download datasheet BSN20 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSN20 BSN20 Datasheet www.VBsemi.com N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID (mA) 250 SOT-23 G1 3D S2 Top View D G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Voltage Operation • Easily Driven Without Buffer • High-Speed Circuits • Low Error Voltage APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.